Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells

Journal of Crystal Growth

Volumn 257, Issue 3-4, 2003, Pages 326-332

  Zheng, X H ^a   Chen, H ^a   Yan, Z B ^a   Yu, H B ^a   Li, D S ^a   Han, Y J ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. High resolution X ray diffraction; A1. Photoluminescence; A3. Low pressure metalorganic chemical deposition; A3. Multiple quantum wells; B2. InxGa1 xN InyGa1 yN

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; STRUCTURE (COMPOSITION); SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EMISSION WAVELENGTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0041360294     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01477-5     Document Type: Article

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