Interface trap and oxide charge generation under negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Zhu, Shiyang ^a   Nakajima, Anri ^a   Ohashi, Takuo ^b   Miyake, Hideharu ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA NITRIDATION; SION GATE DIELECTRICS; STRESS TIMES; VOLTAGE SHIFT;

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TRAPS; MOSFET DEVICES; THERMAL EFFECTS;

CHARGE CARRIERS;

EID: 29144489415     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2138372     Document Type: Article

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