Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 472-474

  Nakajima, Anri ^a   Khosru, Quazi D M ^a   Kasai, Tetsurou ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Atomic layer deposition; Hole mobility; Id Vd characteristics; p MOSFET; Si nitride; Stack gate dielectrics

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); MOSFET DEVICES; NANOTECHNOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

ATOMIC LAYER DEPOSITION; STACK GATE DIELECTRICS;

HOLE MOBILITY;

EID: 0042888791     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814015     Document Type: Letter

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