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Journal of the Electrochemical Society

Volumn 155, Issue 6, 2008, Pages

GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes

(6) Lee, K H a Chang, P C b Chang, S J a Yu, C L a Wang, Y C a Wu, S L c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NAN JEON INSTITUTE OF TECHNOLOGY (Taiwan)

c CHENG SHIU UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GALLIUM NITRIDE; MAGNESIUM; SEMICONDUCTOR DOPING; SPUTTERING;

GAN UV METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM PD); VISIBLE REJECTION RATIO;

PHOTODETECTORS;

EID: 43049121755 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2900102 Document Type: Article

Times cited : (10)

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