High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 300-304

  Kuan, T M ^a   Chang, S J ^a   Su, Y K ^a   Lin, J C ^a   Wei, S C ^a   Wang, C K ^a   Huang, C I ^a   Lan, W H ^b   Bardwell, J A ^c   Tang, H ^c   Lin, W J ^d   Cherng, Y T ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

B1. GaN; B1. InGaN; B3. Heterostructure field effect transistor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; FIELD EFFECT TRANSISTORS; HALL EFFECT; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILANES;

OSCILLATION FREQUENCY; SOURCE-DRAIN (S-D) TERMINALS; TRIMETHYLGALLIUM (TMGA); TRIMETHYLINDIUM (TMIN);

GALLIUM NITRIDE;

EID: 9944227123     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.089     Document Type: Conference Paper

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