Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 15, 2004, Pages

  Sun, J M ^a   Dekorsy, T ^a   Skorupa, W ^a   Schmidt, B ^a   Mucklich A ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; SILICON;

ARTICLE; CHEMICAL MODIFICATION; ENERGY; IMPLANTATION; LIGHT EMITTING DIODE; LUMINESCENCE; PHYSICAL STRESS; ROOM TEMPERATURE;

EID: 42749105483     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.155316     Document Type: Article

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