Blueshift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensity

Journal of Applied Physics

Volumn 83, Issue 3, 1998, Pages 1476-1480

  Bastola, Subas ^a   Chua, S J ^a   Xu, S J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; ULTRATHIN FILMS;

OPTICAL BLUESHIFT; OPTICAL EXCITATION INTENSITY; VALENCE BAND;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032003175     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366853     Document Type: Article

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