A universal electron mobility model of strained Si MOSFETs based on variational wave functions

Solid-State Electronics

Volumn 52, Issue 6, 2008, Pages 863-870

  Liang, Renrong ^a   Li, Debin ^a   Xu, Jun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Intervalley scattering; Mobility model; Phonon limited mobility; Strained Si; Surface roughness scattering; Variational wave function

Indexed keywords

MATHEMATICAL MODELS; MOSFET DEVICES; SILICON; SURFACE ROUGHNESS; VARIATIONAL TECHNIQUES; WAVE FUNCTIONS;

INTERVALLEY SCATTERING; MOBILITY MODEL; PHONON-LIMITED MOBILITY; SURFACE ROUGHNESS SCATTERING; VARIATIONAL WAVE FUNCTION;

ELECTRON MOBILITY;

EID: 42749089311     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.01.007     Document Type: Article

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