Transport in the surface channel of strained Si on a relaxed Si1 - xGex substrate

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 879-885

  Formicone, G F ^a   Vasileska, D ^a   Ferry, D K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; GREEN'S FUNCTION; HETEROJUNCTIONS; PHONONS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACE ROUGHNESS;

LOW FIELD ELECTRON MOBILITY; SURFACE CHANNEL;

SEMICONDUCTING SILICON;

EID: 0031167440     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00042-7     Document Type: Article

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