Effect of low k dielectrics on electromigration reliability for Cu interconnects

Materials Science in Semiconductor Processing

Volumn 7, Issue 3 SPEC. ISS., 2004, Pages 157-163

  Ho, Paul S ^a   Lee, Ki Don ^b   Yoon, Sean ^a   Lu, Xia ^a   Ogawa, Ennis T ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Confinement; Critical length; Electromigration; FEM; Statistical test structure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTROMIGRATION; FINITE ELEMENT METHOD; STATISTICAL METHODS; TENSILE STRESS;

DUAL DAMASCENE; INTERLEVEL DIELECTRICS (ILD); STATISTICAL TEST STRUCTURES;

COPPER;

EID: 4944238954     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.06.005     Document Type: Article

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