Mechanisms of dislocation reduction in an Al0.98Ga 0.02N layer grown using a porous AlN buffer

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Bai, J ^a   Wang, T ^a   Parbrook, P J ^a   Cullis, A G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POROUS MATERIALS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

AL0.55GA0.45; DISLOCATION DENSITY; LATERAL GROWTH FRONTS; THREADING DISLOCATIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33749265631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358123     Document Type: Article

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