Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

Chinese Physics B

Volumn 17, Issue 4, 2008, Pages 1360-1363

  Li, Xin Hua ^a   Zhong, Fei ^a   Qiu, Kai ^a   Yin, Zhi Jun ^a   Ji, Chang Jian ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

Bu er layer; Carrier mobility; Gallium Nitride; Polarity

Indexed keywords

CARRIER MOBILITY; EPILAYERS;

POLARITY;

GALLIUM NITRIDE;

EID: 42449114444     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/4/034     Document Type: Article

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