Growth studies of m-GaN layers on LiAlO2 by MOCVD

Chinese Physics

Volumn 15, Issue 11, 2006, Pages 2706-2709

  Zou, Jun ^a,b   Liu, Cheng Xiang ^c   Zhou, Sheng Ming ^a   Wang, Jun ^a   Zhou, Jian Hua ^a,b   Huang, Tao Hua ^a,b   Han, Ping ^c   Xie, Zi Li ^c   Zhang, Rong ^c  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

LiAlO2 substrate; M plane GaN layer; Optical properties

Indexed keywords

ABSORPTION; EXCITONS; FILM GROWTH; GALLIUM NITRIDE; LAYERED MANUFACTURING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

LIALO2 SUBSTRATE; M-PLANE GAN LAYER; PHOTOLUMINESCENCE SPECTRA; SHARP BAND EDGE;

LITHIUM COMPOUNDS;

EID: 33846073072     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/11/040     Document Type: Article

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