Growth of strain free GaN layers on (0001) oriented sapphire by using quasi-porous GaN template

Chinese Physics Letters

Volumn 23, Issue 6, 2006, Pages 1619-1622

  Xie, Xin Jian ^a   Zhong, Fei ^a   Qiu, Kai ^a   Liu, Gui Feng ^a   Yin, Zhi Jun ^a   Wang, Yu Qi ^a   Li, Xin Hua ^a   Ji, Chang Jian ^a   Han, Qi Feng ^a   Chen, Jia Rong ^a   Cao, Xian Cun ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SODIUM HYDROXIDE;

GALLIUM NITRIDE FILMS; HYDRIDE VAPOR PHASE EPITAXY; MOLECULAR-BEAM EPITAXY; NAOH SOLUTIONS; NITRIDE LAYERS; SAPPHIRE SUBSTRATES; STRAIN-FREE;

GALLIUM NITRIDE;

EID: 33746713733     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/6/073     Document Type: Article

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