A new method to grow high quality GaN film by MOCVD

Wuli Xuebao/Acta Physica Sinica

Volumn 55, Issue 7, 2006, Pages 3606-3610

  Peng, Dong Sheng ^a,b,c   Feng, Yu Chun ^c   Wang, Wen Xin ^c   Liu, Xiao Feng ^c   Shi, Wei ^c   Niu, Han Ben ^c  

^a XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SHENZHEN UNIVERSITY   (China)

Author keywords

GaN film; Lateral epitaxial overgrown (LEO); MOCVD; Surface treated

Indexed keywords

EID: 33747483331     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)