Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

Chinese Physics

Volumn 16, Issue 7, 2007, Pages 2082-2086

  Qiu, Kai ^a   Zhong, Fei ^a   Li, Xin Hua ^a   Yin, Zhi Jun ^a   Ji, Chang Jian ^a   Han, Qi Feng ^a   Chen, Jia Rong ^a   Cao, Xian Cun ^a   Wang, Yu Qi ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

GaN; HVPE; MBE; Polarity

Indexed keywords

GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

CRYSTALLINE QUALITY; HYDRIDE VAPOUR EPITAXY TECHNIQUE (HVPE); PHOTOLUMINESCENCE SPECTRUM; POLARITY OF BUFFER LAYERS;

BUFFER LAYERS;

EID: 34547397431     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/7/046     Document Type: Article

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