Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays

Solid-State Electronics

Volumn 49, Issue 11 SPEC. ISS., 2005, Pages 1722-1727

  Rao, R A ^a   Gasquet, H P ^a   Steimle, R F ^a   Rinkenberger, G ^a   Straub, S ^a   Muralidhar, R ^a   Anderson, S G H ^a   Yater, J A ^a   Ledezma, J C ^a   Hamilton, J ^a   Acred, B ^a   Swift, C T ^a   Hradsky, B ^a   Peschke, J ^a   Sadd, M ^a   Prinz, E J ^a   Chang, K M ^a   White Jr , B E ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Memory; Nanocrystal; Size effects

Indexed keywords

COALESCENCE; ELECTRIC CHARGE; ELECTRIC POTENTIAL; EMBEDDED SYSTEMS; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SILICON; STATISTICAL METHODS;

MEMORY ARRAYS; NANOCRYSTALS; NON-VOLATILE MEMORIES; SIZE EFFECTS;

DATA STORAGE EQUIPMENT;

EID: 28044463366     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.022     Document Type: Article

References (6)

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6. Steimle R et al. IEEE NVSM Workshop. 73; 2004.