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Volumn 47, Issue 6 III, 2000, Pages 2269-2275
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Defects and nanocrystals generated by Si implantation into a-SiO2
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CAPACITANCE MEASUREMENT;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL DEFECTS;
ELECTRIC CHARGE;
ELECTRON SPIN RESONANCE SPECTROSCOPY;
NANOSTRUCTURED MATERIALS;
PROBABILITY DENSITY FUNCTION;
SEMICONDUCTING SILICON;
SILICA;
TRANSMISSION ELECTRON MICROSCOPY;
VOLTAGE MEASUREMENT;
DENSITY FUNCTIONAL THEORY;
ELECTRICAL CHARGE TRAPPING CHARACTERISTICS;
NANOCRYSTALS;
SILICON IMPLANTATION;
THERMAL OXIDES;
ION IMPLANTATION;
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EID: 0034451094
PISSN: 00189499
EISSN: None
Source Type: Journal
DOI: 10.1109/23.903764 Document Type: Conference Paper |
Times cited : (40)
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References (22)
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