High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH4 plasma immersion ion implantation for non-volatile memory applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 166-169

  Choi, Sangmoo ^a   Choi, Hyejung ^a   Kim, Tae Wook ^a   Yang, Hyundeok ^a   Lee, Takhee ^a   Jeon, Sanghun ^b   Kim, Chungwoo ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRAPPING; EMBEDDED SYSTEMS; ION IMPLANTATION; NANOCRYSTALS; NONVOLATILE STORAGE; SILICON NITRIDE;

DETRAPPING; MULTI LEVEL CHARGE STORAGE; PLASMA IMMERSION;

SILICON;

EID: 33847753063     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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