Improved memory characteristics of Ge nanocrystals using a LaAlO 3 buffer layer

Electrochemical and Solid-State Letters

Volumn 11, Issue 6, 2008, Pages

  Choi, Hyejung ^a   Chang, Man ^a   Jo, Minseok ^a   Jung, Seung Jae ^a   Hwang, Hyunsang ^a,b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ELECTRODEPOSITION; HYSTERESIS; NANOCRYSTALS;

CAPACITANCE-VOLTAGE HYSTERESIS; ENHANCED MEMORY PROPERTIES;

GERMANIUM;

EID: 42349090839     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2901545     Document Type: Article

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