A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer

Electrochemical and Solid-State Letters

Volumn 9, Issue 12, 2006, Pages 358-360

  Tu, Chun Hao ^a   Chang, Ting Chang ^b,c   Liu, Po Tsun ^a   Liu, Hsin Chou ^a   Weng, Chi Feng ^b   Shy, Jang Hung ^b   Tseng, Bae Heng ^b   Tseng, Tseung Yuan ^a   Sze, Simon M ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING OXIDE; MEMORY WINDOW; SILICON OXYGEN NITRIDE (SION);

DATA STORAGE EQUIPMENT; GERMANIUM; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; OXIDATION; THERMAL EFFECTS;

SILICON COMPOUNDS;

EID: 33750456139     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2357983     Document Type: Article

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