Growth of polarity-controlled ZnO films on (0001) Al 2O 3

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 736-742

  Park, J S ^a   Chang, J H ^b   Minegishi, T ^a   Lee, H J ^a   Park, S H ^a   Im, I H ^a   Hanada, T ^a   Hong, S K ^c   Cho, M W ^a,d   Yao, T ^a,d  

^a TOHOKU UNIVERSITY   (Japan)

^b Korea Maritime University   (South Korea)

^c Chungnam National University   (South Korea)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Buffer layers; Interface; Nitrides; Polarity; PPZnO; ZnO

Indexed keywords

POLARITY CONTROL;

ALUMINA; BUFFER LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

OXIDE FILMS;

EID: 42249111707     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0350-y     Document Type: Conference Paper

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