Control of polarity of heteroepitaxial ZnO films by interface engineering

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 491-497

  Hong, Soon Ku ^a   Hanada, Takashi ^a   Chen, Yefen ^a   Ko, Hang Ju ^a   Yao, Takafumi ^a   Imai, Daisuke ^b   Araki, Kiyoaki ^b   Shinohara, Makoto ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SHIMADZU CORPORATION   (Japan)

Author keywords

GaN; Interface; Interface engineering; Polarity; Polarity inversion; ZnO

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

INTERFACE ENGINEERING;

METALLIC FILMS;

EID: 0037042035     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00924-2     Document Type: Article

References (7)