Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1286-1290

  Minegishi, Tsutomu ^a   Yoo, Junghoon ^b   Suzuki, Hideyuki ^a   Vashaei, Zahra ^a   Inaba, Katsuhiko ^c   Shim, Keesam ^b   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Changwon National University   (South Korea)

^c RIGAKU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS;

ATOMIC CONFIGURATION; BUFFER THICKNESS; ROCK SALT (RS);

SEMICONDUCTOR GROWTH;

EID: 31344462153     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1861932     Document Type: Conference Paper

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