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Volumn 275, Issue 1-2, 2005, Pages

Polarity control of ZnO on c-plane sapphire by plasma-assisted MBE

(4) Kato, Hiroyuki a Sano, Michihiro a Miyamoto, Kazuhiro a Yao, Takafumi b

Author keywords

A1. Photoluminescence; A1. Polarity; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

EXCITONIC LASING; NONPOLAR SUBSTRATES; POLARITY; ROOM TEMPERATURE (RT);

ZINC OXIDE;

EID: 15944362202 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.377 Document Type: Conference Paper

Times cited : (15)

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