Enhanced model for the efficient 2D and 3D simulation of defective EUV masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 2, 2004, Pages 770-779

  Evanschitzky, Peter ^a   Erdmann, Andreas ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

EUV mask; Lithography simulation; Multilayer defects

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD EFFECTS; FINITE DIFFERENCE METHOD; LITHOGRAPHY; MATHEMATICAL MODELS; MULTILAYERS; TIME DOMAIN ANALYSIS; ULTRAVIOLET RADIATION;

EUV MASKS; EXTREME ULTRAVIOLET (EUV); LITHOGRAPHY SIMULATION; MULTILAYER DEFECTS;

MASKS;

EID: 3843091564     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533217     Document Type: Conference Paper

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