Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Kaneko, M ^a   Hinoki, A ^a   Suzuki, A ^a   Araki, T ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Cleaved surface; Field effect transistor; Kelvin probe force microscopy; Nitride semiconductor; Surface and interface; Two dimensional potential distribution

Indexed keywords

CUBIC BORON NITRIDE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NITRIDES; OPTICAL MICROSCOPY; PASSIVATION; PIGMENTS; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE; STRENGTH OF MATERIALS; SURFACE POTENTIAL;

(100) SILICON; ALGAN/GAN HFETS; FIELD EFFECTS; KELVIN PROBE FORCE MICROSCOPY (KPFM); NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; POTENTIAL DISTRIBUTIONS; SURFACE PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 42149094937     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.765947     Document Type: Conference Paper

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