Kelvin probe force microscopy study of surface potential transients in cleaved AlGaNGaN high electron mobility transistors

Applied Physics Letters

Volumn 90, Issue 21, 2007, Pages

  Kamiya, S ^a   Iwami, M ^a   Tsuchiya, T ^a   Kurouchi, M ^a   Kikawa, J ^a   Yamada, T ^a   Wakejima, A ^b   Miyamoto, H ^b   Suzuki, A ^c   Hinoki, A ^c   Araki, T ^c   Nanishi, Y ^c  

^a R&D Association for Future Electron Devices   (Japan)

^b NEC CORPORATION   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; SURFACE POTENTIAL;

GANSIC INTERFACE; KELVIN PROBE FORCE MICROSCOPY; TIME CONSTANTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34249668395     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743383     Document Type: Article

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