Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate

Applied Physics Letters

Volumn 90, Issue 21, 2007, Pages

  Wakejima, Akio ^a   Ota, Kazuki ^a   Nakayama, Tatsuo ^a   Ando, Yuji ^a   Okamoto, Yasuhiro ^a   Miyamoto, Hironobu ^a   Kamiya, Shinichi ^b,c   Suzuki, Akira ^b  

^a NEC CORPORATION   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE;

FIELD-MODULATING PLATES; GATE EDGE; KELVIN PROVE FORCE MICROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 34249673995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2742288     Document Type: Article

References (17)

1. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, and M. Kuzuhara, IEEE 2001 International Electron Devices Meeting Technical Digest, 2001, p. 17.3.1.
2. U. K. Mishra, P. Parikh, and Y.-F. Wu, Proc. IEEE 90, 1022 (2002).
3. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 21, 421 (2000).
4. J. Li, S. J. Cai, G. Z. Pan, Y. L. Chen, C. P. Wen, and K. L. Wang, Electron. Lett. 37, 196 (2001).
5. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, IEEE Electron Device Lett. 24, 289 (2003).
6. Y. Okamoto, Y. Ando, K. Hataya, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, Electron. Lett. 39, 1474 (2003).
7. H. Mizuta, K. Yamaguchi, and S. Takahashi, IEEE Trans. Electron Devices 34, 2027 (1987).
8. Y. Hori, M. Kuzuhara, Y. Ando, and M. Mizuta, J. Appl. Phys. 87, 3483 (2000).
9. S. Karmalkar and U. K. Mishra, IEEE Trans. Electron Devices 48, 1515 (2001).
10. H.-Y. Cha, Y. C. Choi, L. F. Eastman, and M. G. Spencer, Int. J. High Speed Electron. Syst. 14, 884 (2004).
11. S. Karmalkar, M. S. Shur, G. Simin, and M. A. Khan, IEEE Trans. Electron Devices 52, 2534 (2005).
12. M. Nonnenmacher, M. P. O'Boyle, and H. K. Wickramasinghe, Appl. Phys. Lett. 58, 2921 (1991).
13. O. Vatel and M. Tanimoto, J. Appl. Phys. 77, 2358 (1995).
14. T. Mizutani, M. Arakawa, and S. Kishimoto, IEEE Electron Device Lett. 18, 423 (1997).
15. Y. Okamoto, Y. Ando, K. Hataya, H. Miyamoto, T. Nakayama, M. Inoue, and M. Kuzuhara, IEEE Trans. Microwave Theory Tech. 52, 2536 (2004).
16. S. Kamiya, M. Iwami, T. Tsuchiya, M. Kurouchi, J. Kikawa, T. Yamada, A. Wakejima, H. Miyamoto, A. Suzuki, A. Hinoki, T. Araki, and Y. Nanishi, Appl. Phys. Lett. (to be published).
17. H. O. Jacobs, P. Leuchtmann, O. J. Homan, and A. Stemmer, J. Appl. Phys. 84, 1168 (1998).