Kelvin probe force microscopy for potential distribution measurement of cleaved surface of GaAs devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1826-1829

  Arakawa, Masashi ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Cleaved surface; Current crowding phenomena; Interface charge; Kelvin probe force microscopy; Two dimensional potential distribution

Indexed keywords

EID: 0000530588     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1826     Document Type: Article

References (6)

1. M. Nonnenmacher, M. P. O'Boyle and H. K. Wickramasinghe: Appl. Phys. Lett. 58 (1991) 2921.
2. M. Nonnenmacher, M. P. O'Boyle and H. K. Wickramasinghe: Ultramicroscopy 42-44 (1992) 268.
3. Olivier Vatel and Masafumi Tanimoto: J. Appl. Phys. 77 (1995) 2358.
4. Albert K. Henning and Todd Hochwitz: J. Appl. Phys. 77 (1995) 1888.
5. Masafumi Tanimoto and Olivier Vatel: J. Vac. Sci. Technol. B 14 (1996) 1547.
6. Seiko Instruments: SPI 3700/SPA 300.