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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 6154-6160

Characterization of dielectric etching processes by X-ray photoelectron spectroscopy analyses in high aspect ratio contact holes

(2) Joubert, Olivier a Czuprynski, P b

a ORANGE LABS (France)

b Joseph Fourier University (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DIELECTRIC MATERIALS; PERMITTIVITY; REACTION KINETICS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT HOLES; ELECTRON SHADOWING;

PLASMA ETCHING;

EID: 0033339251 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.6154 Document Type: Article

Times cited : (8)

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