Dry etching with gas chopping without rippled sidewalls

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2768-2771

  Volland, B ^a   Shi, F ^a   Hudek, P ^a   Heerlein, H ^a   Rangelow, Ivo W ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033267057     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591061     Document Type: Article

References (7)

1. I. W. Rangelow, Proc. SPIE 1392, 180 (1990).
2. I. W. Rangelow, Microelectron. Eng. 17, 349 (1992).
3. R. Leuschner, E. Günther, G. Falk, A. Hammerschmidt, K. Kragler, I. W. Rangelow, and J. Zimmermann, Microelectron. Eng. 30, 447 (1996).
4. I. W. Rangelow (unpublished).
5. I. W. Rangelow et al., J. Vac. Sci. Technol. B 16, 3592 (1998).
6. B. O. Cho, S. W. Hwang, I. W. Kim, and S. H. Moon, J. Electrochem. Soc. 146, 350 (1999).
7. I. W. Rangelow, Deep Etching of Silicon (Polytechniks, Wroclaw, 1996).