Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 911-915

  Hossain, Faruque M ^a,b   Nishii, J ^a,c   Takagi, S ^a,b   Sugihara, T ^d   Ohtomo, A ^a   Fukumura, T ^a   Koinuma, H ^a,e   Ohno, H ^c   Kawasaki, M ^a,e  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d SHARP CORPORATION   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Grain boundary; Modeling; Thin film transistors; ZnO

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; GATES (TRANSISTOR); GRAIN BOUNDARIES; MATHEMATICAL MODELS; POTENTIAL ENERGY; ZINC OXIDE;

MODELING; ZNO;

THIN FILM TRANSISTORS;

EID: 1642346522     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.149     Document Type: Conference Paper

References (4)

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3. Nishii J., M. Hossain Faruque, Aita T., Ohmaki Y., Kishimoto S., Fukumura T., Ohno Y., Ohno H., Takagi S., Saikusa K., Ohkubo I., Ohtomo A., Matsukura F., Koinuma H., Kawasaki M. Jpn. J. Appl. Phys. 42(Part 2):2003;L347.
4. M. Hossain Faruque, Nishii J., Takagi S., Ohtomo A., Fukumura T., Fujioka H., Ohno H., Koinuma H., Kawasaki M. J. Appl. Phys. 94:2003;7768.