Modeling of boron diffusion in silicon carbide

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 327-330

  Bracht, H ^a   Stolwijk, N A ^a   Laube, M ^b   Pensl, G ^b  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; COMPUTER SIMULATION; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION IMPLANTATION; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

EPITAXIAL LAYERS; KICK-OUT MECHANISM; SELF INTERSTITIALS; TRANSIENT ENHANCED DIFFUSION;

SILICON CARBIDE;

EID: 18244415871     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.327     Document Type: Article

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