Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2298-2300

  Prunnila, M ^a   Ahopelto, J ^a   Gamiz, F ^b  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON MOBILITY; FILM GROWTH; HALL EFFECT; PHONONS; POISSON EQUATION; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

COULOMB SCATTERING; HALL MOBILITY; HIGH CARRIER DENSITY (HCD); HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); MOBILITY DEGRADATION;

MOSFET DEVICES;

EID: 2142697233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687980     Document Type: Article

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