Image and exchange-correlation effects in double gate silicon-on-insulator transistors

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 374-378

  Gamiz F ^a   Cartujo Cassinello, P ^a   Jimenez Molinos F ^a   Carceller, J E ^a   Cartujo, P ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTRON MOBILITY; INTERFACES (MATERIALS); OPTICAL CORRELATION; PERMITTIVITY; PHONONS; SUBSTRATES; THIN FILMS; TRANSISTORS;

CHARGE DISTRIBUTION; PHONON SCATTERING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1642618675     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.017     Document Type: Conference Paper

References (7)

1. Wong H.S. IBM J. Res. Dev. 46:2002;133-168.
2. Balestra F., Cristoloveanu S., Benachir M., Brini J., Elewa T. IEEE Electron Dev. Lett. EDL-9:1987;410-412.
3. Ando T., Fowler A.B., Stern F. Rev. Mod. Phys. 54:1982;437-672.
4. Fischetti M.V., Laux S.E. Phys. Rev. B48:1993;2244-2274.
5. Kleefstra M., Herman G.C. J. Appl. Phys. 51:1980;4923-4926.
6. Stern F., Das Sarma S. Phys. Rev. B30:1984;840-848.
7. Gámiz F., Fischetti M.V. J. Appl. Phys. 89:2001;5478-5487.