Enhancement mode n-MOSFET with high-κ dielectric on GaAs substrate

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 205-206

  Rajagopalan, K ^a   Zurcher, P ^a   Abrokwah, J ^a   Droopad, R ^a   Moran, D A J ^b   Hill, R J W ^b   Li, X ^b   Zhou, H ^b   McIntyre, D ^b   Thoms, S ^b   Thayne, I G ^b   Passlack, M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGIES; COMPOUND SEMICONDUCTOR (CS); DEVICE SCALING; ELECTRICAL INTERFACING; ENHANCEMENT MODE (E MODE); GAAS(001) SUBSTRATES; GADOLINIUM GALLIUM OXIDE (GGO); GALLIUM OXIDES; HETEROSTRUCTURES; HIGH K DIELECTRICS; N MOSFET; PHYSICAL LIMITS; ROAD MAPS;

ARSENIC COMPOUNDS; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GADOLINIUM; GALLIUM; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOSFET DEVICES; NONMETALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS;

SUBSTRATES;

EID: 47249111387     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373719     Document Type: Conference Paper

References (0)