Optimization and reliability characteristics of TiO2/HfO 2 multi-metal dielectric MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 168-169

  Rhee, Se Jong ^a   Kim, Hyoung Sub ^a   Kang, Chang Yong ^a   Choi, Chang Hwan ^a   Zhang, Manhong ^a   Zhu, Feng ^a   Lee, Tackhwi ^a   Ok, Injo ^a   Akbar, Mohammad S ^a   Krishnan, Siddarth A ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Mobility; TiO2 HfO2 ratio; Two step breakdown

Indexed keywords

DIELECTRIC DEVICES; HAFNIUM COMPOUNDS; HOLE MOBILITY; HYSTERESIS; MOSFET DEVICES; OPTIMIZATION; RELIABILITY; TRANSISTORS;

MOBILITY; REDUCED HYSTERESIS; TIO2/HFO2 RATIO; TWO-STEP BREAKDOWN;

TITANIUM OXIDES;

EID: 33745157539     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469254     Document Type: Conference Paper

References (2)

1. S.J.Rhee, et al., "Improved electrical and material characteristics of hafnium titanate multi-metal oxide n-MOSFETs with ultra-thin EOT (∼8Å) gate dielectric application", Tech. Dig. IEDM, 2004, pp.837-840
2. 2 dielectrics", IEEE Trans Elec.Dev., vol.44, pp. 104-109, January, 1997