Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 45-46

  Ok, InJo ^a   Kim, H ^a   Zhang, M ^a   Lee, T ^a   Zhu, F ^a   Thareja, G ^a   Yu, L ^a   Koveshnikov, S ^b   Tsai, W ^b   Tokranov, V ^b   Yakimov, M ^b   Oktyabrsky, S ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 45149122153     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Byoung Hun Lee et al., IEDM Tech. Cig., 1999, pp. 133-136.
2. S. Koveshnikov et al., Appl. Phys. Lett., vol. 88, 022106 (2006)