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Volumn 38, Issue 7 B, 1999, Pages 4013-4016
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Nitrogen donor concentrations and its energy levels in 4H-SiC uniquely determined by a new graphical method based on hall-effect measurement
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Author keywords
4H SiC; Acceptor concentration; Donor concentration; Donor level; Evaluation of dopants; Graphical approach; Hall effect measurement; Majority carrier concentration; SiC; Temperature dependence
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Indexed keywords
CARRIER CONCENTRATION;
DIFFERENTIATION (CALCULUS);
ELECTRON ENERGY LEVELS;
GRAPHIC METHODS;
HALL EFFECT;
NITROGEN;
SEMICONDUCTOR MATERIALS;
SILICON CARBIDE;
TEMPERATURE MEASUREMENT;
ACCEPTOR CONCENTRATION;
DONOR CONCENTRATION;
DONOR LEVEL;
GRAPHICAL APPROACH;
TEMPERATURE DEPENDENCE;
SEMICONDUCTOR DOPING;
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EID: 0033322938
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.4013 Document Type: Article |
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Times cited : (26)
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References (4)
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