Influence of titanium content on the structural and electrical properties of Er1-x Tix Oy gate dielectrics

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Pan, Tung Ming ^a   Shu, Wei Hao ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; CURRENT DENSITY; LEAKAGE CURRENTS; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

LEAKAGE CURRENT DENSITY; METAL OXIDE FILMS;

GATE DIELECTRICS;

EID: 40549143123     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2839556     Document Type: Article

References (24)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065, 89, 5243 (2001).
2. J. Kim and K. Yong, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.1676114, 7, F35 (2004).
3. Z. Zhang, M. Li, and S. A. Campbell, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2005.852729, 52, 1839 (2005).
4. A. Fissel, H. J. Osten, and E. Bugiel, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1589516, 21, 1765 (2003).
5. E. Miranda, J. Molina, Y. Kim, and H. Iwai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1944890, 86, 232104 (2005).
6. T. M. Pan, C. L. Chen, W. W. Yeh, and W. J. Lai, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.2428415, 10, H101 (2007).
7. H. Iwai, S. Ohmi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2002, 625.
8. Y. Zhao, M. Toyama, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2174840, 88, 072904 (2006).
9. Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2420794, 89, 252905 (2006).
10. T. T. Van and J. P. Chang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1984082, 87, 011907 (2005).
11. S. Chen, Y. Y. Zhu, R. Xu, Y. Q. Wu, X. J. Yang, Y. L. Fan, F. Lu, Z. M. Jiang, and J. Zou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2208958, 88, 222902 (2006).
12. V. Mikhelashvili, G. Eisenstein, and F. Edelmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1456267, 80, 2156 (2002).
13. T. M. Pan, C. L. Chen, W. W. Yeh, and S. J. Hou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2399938, 89, 222912 (2006).
14. T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, Ch. Wenger, G. Lippert, and H. J. Mussig, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1978978, 87, 022902 (2005).
15. S. Jeon and H. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1528731, 81, 4856 (2002).
16. R. B. van Dover, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124058, 74, 3041 (1999).
17. L. F. Mao, C. H. Tan, and M. Z. Xu, Solid-State Electron. SSELA5 0038-1101 10.1016/S0038-1101(01)00038-7, 45, 531 (2001).
18. T. M. Pan, W. H. Shu, and J. L. Hong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2744486 90, 222906 (2007).
19. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corporation, Eden Prairie, MN (1992).
20. S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.568766, 18, 209 (1997).
21. S. M. Sze, Physics of Semiconductors, 2nd ed., John Wiley & Sons, New York (1981).
22. W. A. Hill and C. C. Coleman, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(80)90064-7, 23, 987 (1980).
23. L. Kim, J. Kim, D. Jung, and Y. Roh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126199, 76, 1881 (2000).
24. B. Ricco, G. Gozzi, and M. Lanzoni, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.701488, 45, 1554 (1998).