Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Joshi, Sachin ^a   Sahu, Bhagwan ^a   Banerjee, Sanjay K ^a   Ciucivara, Adrian ^b   Kleinman, Leonard ^b   Wise, Rick ^c   Cleavelin, Rinn ^c   Pinto, Angelo ^c   Seacrist, Mike ^d   Ries, Mike ^d   Huang, Y T ^e   Ma, Mike ^e   Lin, C T ^e  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d MEMC Electronic Materials Inc   (United States)

^e UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC STRUCTURE; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

CONVENTIONAL DEVICE SIMULATORS; DIRECT SILICON BONDING (DSB); SUBSTRATE ORIENTATIONS; TWO TERMINAL DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33846639710     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2434164     Document Type: Article

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