On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4597-4599

  Crupi, F ^a   Ciofi, C ^a   Germano A ^a   Iannaccone, G ^b   Stathis, J H ^c   Lombardo, S ^d  

^a UNIVERSITY OF MESSINA   (Italy)

^b UNIVERSITY OF PISA   (Italy)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRODES; ELECTRON TUNNELING; ENERGY GAP; LEAKAGE CURRENTS; METALLIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; TRANSISTORS;

BAND DIAGRAMS; CONDUCTION MECHANISM; DIRECT TUNNELING; HIGH FIELD STRESS; METAL OXIDE SEMICONDUCTOR STRUCTURE; SILICON BAND GAP; STRESS-INDUCED; ULTRA-THIN OXIDE;

INTERFACE STATES;

EID: 79956035106     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1487450     Document Type: Article

References (12)

1. P. E. Nicollian, M. Rodder, D. T. Grider, P. Chen, R. M. Wallace, and S. V. Hattangady, Proceedings of the International Reliability Physics Symposium (IEEE, San Diego, 1999), p. 400.
2. A. Ghetti, E. Sangiorgi, J. Bude, T. W. Sorsch, and G. Weber, IEEE Trans. Electron Devices 47, 2358 (2000). etd IETDAI 0018-9383
3. G. Iannaccone, F. Crupi, B. Neri, and S. Lombardo, Appl. Phys. Lett. 77, 2876 (2000). apl APPLAB 0003-6951
4. A. Ghetti, E. Sangiorgi, T. W. Sorsch, and I. Kizilyalli, Microelectron. Eng. 48, 31 (1999). mie MIENEF 0167-9317
5. G. Timp, K. K. Bourdelle, J. E. Bower, F. H. Baumann, T. Boone, R. Cirelli, K. Evans-Lutterodt, J Garno, A. Ghetti, H. Gossmann, M. Green, D. Jacobson, Y. Kim, R. Kleiman, F. Klemens, A. Kornlit, C. Lochstampfor, W. Mansfield, and S. Moccio, Tech. Dig.-Int. Electron Devices Meet. 1998, 615 (1998) tcd TDIMD5 0163-1918
6. B. Riccò, G. Gozzi, and M. Lanzoni, IEEE Trans. Electron Devices 45, 1554 (1998). etd IETDAI 0018-9383
7. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982). jap JAPIAU 0021-8979
8. A. Schenk and G. Heiser, J. Appl. Phys. 81, 7900 (1997). jap JAPIAU 0021-8979
9. D. J. DiMaria and E. Cartier, J. Appl. Phys. 78, 3883 (1995). jap JAPIAU 0021-8979
10. D. J. DiMaria and J. H. Stathis, Appl. Phys. Lett. 74, 1752 (1999). apl APPLAB 0003-6951
11. S. Takagi, N. Yasuda, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 1996, 323 (1996)
12. E. Rosenbaum and L. F. Register, IEEE Trans. Electron Devices 44, 317 (1997). etd IETDAI 0018-9383