Performance of polysilicon gate HfO2 MOSFETs on (100) and (111) silicon substrates

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 254-256

  Onishi, Katsunori ^a   Kang, Chang Seok ^a   Choi, Rino ^a   Cho, Hag Ju ^a   Kim, Young Hee ^a   Krishnan, Siddharth ^a   Shahariar Akbar, Mohammad ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Charge pumping; CMOSFETs; Hafnium; HfO2; High k gate dielectric; Mobility; Polysilicon gate; Surface states

Indexed keywords

ANNEALING; CAPACITANCE; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH TEMPERATURE OPERATIONS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

CAPACITANCE VOLTAGE CHARACTERISTICS; CHARGE PUMPING; HIGH TEMPERATURE FORMING GAS ANNEALING; MOBILITY DEPENDENCE;

MOSFET DEVICES;

EID: 0038104307     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.810884     Document Type: Letter

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