Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 41, Issue , 2000, Pages 420-429

  Esmark, K ^a   Stadler, W ^a   Wendel, M ^a   Gossner, H ^a   Guggenmos, X ^a   Fichtner, W ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISCHARGES; MOS DEVICES; OPTIMIZATION; SEMICONDUCTING SILICON;

ELECTROSTATIC DISCHARGES (ESD);

SEMICONDUCTOR DEVICE MODELS;

EID: 0034542055     PISSN: 07395159     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00032-4     Document Type: Article

References (0)