Attempt to explain thermally induced soft failures during low level ESD stresses: Study of the differences between soft and hard NMOS failures

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1997, Pages 337-346

  Salome, Pascal ^a   Leroux, Charles ^a   Mariolle, Denis ^a   Lafond, Dominique ^a   Chante, Jean Pierre ^a   Crevel, Philippe ^a   Reimbold, Gilles ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC DISCHARGES; ELECTROSTATICS; SHORT CIRCUIT CURRENTS; SILICON; SYNTHETIC FIBERS; THERMAL EFFECTS;

ELECTROSTATIC DISCHARGE (ESD); THERMAL SOFT FAILURES;

MOS DEVICES;

EID: 0031357311     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (30)