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Volumn 2002-January, Issue , 2002, Pages 101-110

Technology CAD evaluation of BiCMOS protection structures operation including spatial thermal runaway

Author keywords

BiCMOS integrated circuits; Protection

Indexed keywords

ELECTRONIC DESIGN AUTOMATION; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; THERMODYNAMIC STABILITY;

EID: 84948778506     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (14)
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    • Groph, G.1    Bernier, J.2
  • 3
    • 85051930633 scopus 로고
    • New ED Protectioin schemes for BiCMOS Processes with application to cellular radio design
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    • Mack, W.D.1    Meyer, R.G.2
  • 4
    • 0029536334 scopus 로고
    • Bipolar SCR ESD Protection circuit for high speed submicron Bipolar/BiCMOS circuits
    • J.Z. Chen, A. Amerasekera, and T. Vrotos, "Bipolar SCR ESD Protection circuit for high speed submicron Bipolar/BiCMOS circuits", IEDM, pp. 337-340, 1995.
    • (1995) IEDM , pp. 337-340
    • Chen, J.Z.1    Amerasekera, A.2    Vrotos, T.3
  • 5
    • 0031383750 scopus 로고    scopus 로고
    • Electrical Filamentation in LDD ggMOS protection structures
    • Santa Clara
    • V.A. Vashchenko, et al., "Electrical Filamentation in LDD ggMOS protection structures," EOS/ESD Symposium (Santa Clara), pp. 330-336, 1997.
    • (1997) EOS/ESD Symposium , pp. 330-336
    • Vashchenko, V.A.1
  • 6
    • 0030129156 scopus 로고    scopus 로고
    • Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET
    • V.A. Vashchenko, Y.B. Martynov, and V.F. Sinkevitch, IEEE Trans. Electron Devices," Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET", vol. ED-43, no.4, pp. 513-518, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.ED-43 , Issue.4 , pp. 513-518
    • Vashchenko, V.A.1    Martynov, Y.B.2    Sinkevitch, V.F.3
  • 7
    • 0030410869 scopus 로고    scopus 로고
    • Electrical curent instability at gate breakdown in GaAs MESFET
    • V.A. Vashchenko, Y.B. Martynov, and V.F. Sinkevitch, IEEE Trans. Electron Devices,vol.43, no.12, "Electrical curent instability at gate breakdown in GaAs MESFET", pp.2080-2084, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.12 , pp. 2080-2084
    • Vashchenko, V.A.1    Martynov, Y.B.2    Sinkevitch, V.F.3
  • 8
    • 0031357311 scopus 로고    scopus 로고
    • An attempt to Eplain thermally induced soft failures during low level ESD stresses: Study of the differences between soft and hard NMOS failures
    • P. Salome, C. Leroux, D. Mariolle, D. Lafond, J.P. Chante, P. Crevel, G. Reimbold "An attempt to Eplain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures", EOS/ESD Symposium, pp.337-345, 1997.
    • (1997) EOS/ESD Symposium , pp. 337-345
    • Salome, P.1    Leroux, C.2    Mariolle, D.3    Lafond, D.4    Chante, J.P.5    Crevel, P.6    Reimbold, G.7
  • 11
    • 0034542055 scopus 로고    scopus 로고
    • Advanced 2D/3D ESD Device Simulation - A powerful tool already used in a pre-Si Phase
    • K. Esmark, W.Stadler, M. Wendel, H.Gobner, X.Guggenmos, and W. Fichtner, "Advanced 2D/3D ESD Device Simulation - A powerful tool already used in a pre-Si Phase", EOS/ESD Symposium, pp.4A.3.1-4A.3.9, 2000.
    • (2000) EOS/ESD Symposium , pp. 4A.3.1-4A.3.9
    • Esmark, K.1    Stadler, W.2    Wendel, M.3    Gobner, H.4    Guggenmos, X.5    Fichtner, W.6
  • 12
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    • Version 2001.2.0.Avant! Corporation, CA
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  • 13
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    • Medici, Version 2001.2.0.Avant! Corporation, CA.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.