MOSFET triggering silicon controlled rectifiers for electrostatic discharge protection circuits

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1799-1803

  Jang, Sheng Lyang ^a   Li, Shao Hua ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

ESD protection; MOSFET; SCR; Trigger voltage

Indexed keywords

ELECTRIC DISCHARGES; ELECTRIC POWER SYSTEMS; ELECTROSTATICS; GATES (TRANSISTOR); MOSFET DEVICES; TRIGGER CIRCUITS; VOLTAGE CONTROL; WAVEFORM ANALYSIS;

ELECTROSTATIC DISCHARGES;

RECTIFYING CIRCUITS;

EID: 0035478369     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00187-3     Document Type: Article

References (12)

1. Tutorial electrical overstress and electrostatic discharge
2. ESD: A pervasive reliability concern for IC technologies
3. Design methodology and optimization of gate-driven NMOS ESD protection circuits in submicron CMOS processes
4. How to safely apply the LVTSCR for CMOS whole-chip ESD protection without being accidentally triggered on
5. Complementary-LVTSCR ESD protection circuit for submicron CMOS VLSI/ULSI
6. A low-voltage triggering SCR for on-chip ESD protection at output and input pads
7. A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS ICs
8. Novel diode-chain triggering SCR circuits for ESD protection
9. Temperature-dependence of steady-state characteristics of SCR-type ESD protection circuits
10. An SCR-type ESD protection circuits with variable holding voltage
11. Dynamic triggering characteristics of SCR-type ESD protection circuits