Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions

Applied Surface Science

Volumn 254, Issue 11, 2008, Pages 3385-3390

  Lachab, M ^a   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

InAs; Macro and micro photoluminescence; Quantum dots

Indexed keywords

ACTIVATION ENERGY; GROUND STATE; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BARRIER LAYERS; DEFECTS CENTERS; THERMAL QUENCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 39749160595     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.11.023     Document Type: Article

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