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Volumn 90, Issue 25 I, 2003, Pages 2574021-2574024

Coherent spectroscopy of optically gated charged single InGaAs quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPY; VAPOR PHASE EPITAXY;

EID: 0042267341     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (99)

References (23)
  • 5
    • 0032553484 scopus 로고    scopus 로고
    • N. H. Bonadeo et al., Science 282, 1473 (1998).
    • (1998) Science , vol.282 , pp. 1473
    • Bonadeo, N.H.1
  • 14
    • 0041559546 scopus 로고    scopus 로고
    • note
    • At higher intensities, carriers are created in the wetting layer by absorption in the continuum background [15] and neutralize the charge complex. Alternatively, an excited charged exciton can decompose into an s exciton by ejecting the charge carrier from the QD through an Augerlike process [16], leaving X emission.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.